CD4012 Dual 4-Input NAND Gate IC DIP-14 Package

The NAND gate is monolithic complementary MOS (CMOS) integrated circuits. The N- and P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage. This results in high noise immunity over a wide supply voltage range. No DC power other than that caused by leakage current is consumed during static conditions. All inputs are protected against static discharge and latching conditions.

Features:-

• Two Independent 4-input NAND Gates
• Standard Pin Configuration
• Wide Operating Voltage Range
• Operating Temperature to 85°C
• Low Power CMOS

Specifications:-

Parameter	Specification
Voltage at Any Pin	VSS -0.3V to VDD +0.3V
Operating Temperature Range	-40°C to + 85°C
Storage Temperature Range (TS)	-65°C to +150°C
Power Dissipation (PD): Dual-In-Line	700 mW
Operating Range (VDD)	VSS +3.0V to VSS +15V
Lead Temperature (TL)	260°C

(For detailed specification refer Data Sheet)

Related Document:-

CD4012 IC Datasheet