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E38NA50 IGBT DIODE

In Stock

Brand: Generic   |   SKU: 8690969

2,175.05

₹ 2,533.80

Save 14%
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  • COD order value minimum Rs 600.
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Description

Description

The E38NA50 is an IGBT (Insulated Gate Bipolar Transistor) with an integrated diode designed for high-power applications. It combines the low conduction losses of a bipolar transistor with the high switching speed of a MOSFET. This makes it suitable for use in inverters, motor drives, and power supplies.

Specifications:

  • Collector-Emitter Voltage (Vces): 500V
  • Continuous Collector Current (Ic): 40A
  • Gate-Emitter Voltage (Vge): ±20V
  • Power Dissipation (Pd): 160W
  • Collector-Emitter Saturation Voltage (Vce(sat)): 2.7V
  • Turn-On Delay Time (td(on)): 50ns
  • Turn-Off Delay Time (td(off)): 450ns
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-3P

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