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This P−Channel Logic Level MOSFET is produced uses advanced low voltage Power Trench process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and dc−dc conversion.
RDS(ON) = 70 mΩ @ VGS = -4.5V
RDS(ON) = 110 mΩ @ VGS = -2.5V
1 x FDN340P MOSFET - (SMD SOT-23 Package) - 20V 2A P-Channel Logic Level MOSFET