H11F1 Photo FET Optocoupler IC DIP-6 Package

The H11F consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11F series devices are mounted in dual in-line packages.

Features:-

• As a remote variable resistor

• ≤ 100Ω to ≥ 300 MΩ

• ≥ 99.9% linearity

• ≤ 15 pF shunt capacitance

• ≥ 100 GΩ I/O isolation resistance As an analog switch

• Extremely low offset voltage

• 60 Vpk-pk signal capability

• No charge injection or latch-up

• ton, toff ≤ 15 µS

• UL recognized (File #E90700)

• VDE recognized (File #E94766) – Ordering option ‘300’ (e.g. H11F1.300)

Applications:-

• As a variable resistor-

Isolated variable attenuator

Automatic gain control

Active filter fine tuning/band switching

• As an analog switch-

Isolated sample and hold circuit

Multiplexed, optically isolated A/D conversion

Specification:-

Related Document:-

H11F1 IC Data Sheet