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Brand: Generic | SKU: 3676095
₹ 38.00
                    ₹ 67.00
                
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IRF630 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
  
 
Features:-
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Compliant to RoHS directive 2002/95/EC
  
 
Detailed Specifications:-
| Number of Channels | 1 Channel | 
| Transistor Polarity | N-Channel | 
| Drain-Source Breakdown Voltage (Vds) | 200V | 
| Continuous Drain Current (Id) | 9A | 
| Drain-Source Resistance (Rds On) | 0.4Ohms | 
| Gate-Source Voltage (Vgs) | 20V | 
| Gate Charge (Qg) | 43 nC | 
| Operating Temperature Range | -55 - 150°C | 
| Power Dissipation (Pd) | 74W | 
  
 
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