J2-Q02A-C IGBT

The J2-Q02A-C is an IGBT (Insulated Gate Bipolar Transistor) designed for power electronics applications. With a voltage rating of 600V and a current rating of 25A, it offers efficient switching performance. Its compact size and robust design make it suitable for various industrial and automotive applications requiring high-power handling capabilities.

Specifications:

• Voltage Rating: Usually around 600V.
• Current Rating: Typically rated at 25A.
• Package Type: Commonly available in a TO-220 package.
• Switching Speed: Generally specified in terms of turn-on and turn-off times, typically in the range of tens of nanoseconds.
• Gate Threshold Voltage: The voltage required to turn the IGBT on, usually around 5V.
• Maximum Operating Temperature: Typically rated up to 150°C.
• On-State Voltage Drop: Typically in the range of 1.5 to 2.5V depending on the current.
• Gate Charge: The amount of charge required to switch the IGBT on or off, specified in microcoulombs (µC).
• Reverse Recovery Time: For freewheeling diode behavior if integrated, specified in nanoseconds.
• Insulation Voltage: If applicable, the voltage rating for isolation between the gate and the main circuit.