FGA25N120ANTD IGBT - 1200V 25A NPT Trench IGBT

FGA25N120ANTD IGBT - 1200V 25A NPT Trench I GBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven.

Features:-

• NPT Trench Technology, Positive Temperature Coefficient

• Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25C

• Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25C

• Extremely Enhanced Avalanche Capability

Applications:-

• Induction Heating

• Microwave Oven

Specifications:-

Symbol	Description	Ratings	Units
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	±20	V
IC	Collector Current @ TC = 25°C	50	A
	Collector Current @ TC = 100°C	25	A
ICM	Pulsed Collector Current	90	A
IF	Diode Continuous Forward Current  @ TC = 25°C	50	A
	Diode Continuous Forward Current     @ TC = 100°C	25	A
IFM	Diode Maximum Forward Current	150	A
PD	Maximum Power Dissipation @ TC = 25°C	312	W
	Maximum Power Dissipation @ TC = 100°C	125	W
TJ	Operating Junction Temperature	-55 to +150	°C
Tstg	Storage Temperature Range	55 to +150	°C
TL	Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds	300	°C

Related Document:-

FGA25N120ANTD IGBT Data Sheet